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High frequency guided wave defect imaging in monocrystalline silicon wafers
Author(s): Mathieu Simon; Bernard Masserey; Jean-Luc Robyr; Paul Fromme
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Paper Abstract

Micro-cracks can be induced in thin monocrystalline silicon wafers during the manufacture of solar panels. High frequency guided waves allow for the monitoring of wafers and characterization of defects. Selective excitation of the first anti-symmetric A0 guided wave mode was achieved experimentally using a custom-made wedge transducer. The Lamb wave scattered field in the vicinity of artificial defects was measured using a noncontact laser interferometer. The surface extent of the shallow defects varying in size from 30 μm to 100 μm was characterized using an optical microscope. The characteristics of the scattered wave field were correlated to the defect size and the detection sensitivity was discussed.

Paper Details

Date Published: 1 April 2019
PDF: 8 pages
Proc. SPIE 10972, Health Monitoring of Structural and Biological Systems XIII, 1097206 (1 April 2019); doi: 10.1117/12.2513675
Show Author Affiliations
Mathieu Simon, HES-SO Univ. of Applied Sciences and Arts Western Switzerland (Switzerland)
Bernard Masserey, HES-SO Univ. of Applied Sciences and Arts Western Switzerland (Switzerland)
Jean-Luc Robyr, HES-SO Univ. of Applied Sciences and Arts Western Switzerland (Switzerland)
Paul Fromme, Univ. College London (United Kingdom)


Published in SPIE Proceedings Vol. 10972:
Health Monitoring of Structural and Biological Systems XIII
Paul Fromme, Editor(s)

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