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Advances in development of the GaSb-based type-I quantum-well cascade-diode lasers: wavelength tuning and mode-locking (Conference Presentation)
Author(s): Leon Shterengas; Takashi Hosoda; Tao Feng; Jiang Jiang; Alexey Belyanin; Gela Kipshidze; Gregory Belenky
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Paper Abstract

Cascade pumping of type-I quantum well gain sections led to increase of the output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 µm. The wide stripe multimode lasers based on cascade lasers heterostructures generate watt class output power levels up to 3 µm. The corresponding narrow ridge single spatial mode and single frequency mode distributed feedback devices generate tens of mW. The external cavity lasers utilizing gain chips based on cascade diode laser heterostructures demonstrate extra wide tuning range. The short pulse passively mode-locked lasers generate optical frequency combs.

Paper Details

Date Published: 13 March 2019
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Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093918 (13 March 2019); doi: 10.1117/12.2513637
Show Author Affiliations
Leon Shterengas, Stony Brook Univ. (United States)
Takashi Hosoda, Stony Brook Univ. (United States)
Tao Feng, Stony Brook Univ. (United States)
Jiang Jiang, Stony Brook Univ. (United States)
Alexey Belyanin, Texas A&M Univ. (United States)
Gela Kipshidze, Stony Brook Univ. (United States)
Gregory Belenky, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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