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Development of soft x-ray laser irradiation beamline for ablation and damage study
Author(s): Masahiko Ishino; Thanh-Hung Dinh; Noboru Hasegawa; Kazuyuki Sakaue; Takeshi Higashiguchi; Satoshi Ichimaru; Masatoshi Hatayama; Masakazu Washio; Masaharu Nishikino
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Paper Abstract

The interactions of short pulse lasers with matter are interesting subjects not only in applications such as surface fabrication but also in physical phenomena for study. Optical short pulse lasers have abilities to occur the ablation phenomena accompanying the creation of high temperature, high pressure, and excited states of electrons. The picosecond soft x-ray laser (SXRL) pulse also has ability to occur the ablation. The SXRL having the wavelength of 13.9 nm and duration of 7 ps is one of attractive x-ray source for ablation study, because the ablation threshold obtained with the focused SXRL pulse is much smaller than those obtained with other lasers having longer durations and/or longer wavelengths. The low ablation threshold of a material for the SXRL beam has a possibility of efficient nanometer scale surface machining by an ablation. The ablation study will lead to the physical research and the direct surface machining. In addition, the wavelength of the SXRL is very close to the wavelength of the extreme ultraviolet (EUV) lithography system (λ = 13.5 nm). In the presentation, we report on development of the soft x-ray laser irradiation system. The irradiation system has an intensity monitor based on the Mo/Si multilayer beam splitter. This intensity monitor provides the irradiation energy onto sample surface. The SXRL has an ability to confirm the ablation threshold and to examine the damage property of EUV optical elements, which have the same specifications of those in the EUV lithography. And more, it is possible to evaluate the doses for sensitivity of resists.

Paper Details

Date Published: 4 March 2019
PDF: 5 pages
Proc. SPIE 10905, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV, 109051C (4 March 2019); doi: 10.1117/12.2513390
Show Author Affiliations
Masahiko Ishino, National Institutes for Quantum and Radiological Science and Technology (Japan)
Thanh-Hung Dinh, National Institutes for Quantum and Radiological Science and Technology (Japan)
Noboru Hasegawa, National Institutes for Quantum and Radiological Science and Technology (Japan)
Kazuyuki Sakaue, The Univ. of Tokyo (Japan)
Takeshi Higashiguchi, Utsunomiya Univ. (Japan)
Satoshi Ichimaru, NTT Advanced Technology Co. (Japan)
Masatoshi Hatayama, NTT Advanced Technology Co. (Japan)
Masakazu Washio, Waseda Univ. (Japan)
Masaharu Nishikino, National Institutes for Quantum and Radiological Science and Technology (Japan)


Published in SPIE Proceedings Vol. 10905:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
Tetsuya Makimura; Gediminas Račiukaitis; Carlos Molpeceres, Editor(s)

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