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Experimental investigation of performances enhancement in hot carrier solar cells: improvements and perspectives (Conference Presentation)
Author(s): Laurent Lombez; Dac-Trung Nguyen; François Gibelli; Julie Goffard; Andrea Cattoni; Soline Boyer-Richard; Alain Le Corre; Olivier Durand; Stéphane Collin; Jean-François Guillemoles
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Paper Abstract

In single junction solar cells a large part of the incident energy ends up as heat which limits their maximum achievable efficiency. Thus the achievement of maximum power conversion efficiencies relies on complex multijunction devices. Here we show the possibility to harvest the available solar energy using hot carrier devices and evidence a positive contribution of the hot carrier effect on photovoltaic performances. We investigated a semiconductor heterostructure based on a single InGaAsP quantum well using quantitative optoelectrical characterization, especially luminance measurements. The quantitative thermodynamic study of the hot carrier population allows us to discuss the hot carrier contribution to the solar cell performance. We demonstrate that voltage and current are enhanced due to the presence of the hot carrier population in the quantum well. These experimental results substantiate the potential of increasing photovoltaic performances in the hot carrier regime. Moreover, by developing a suitable analytic theoretical framework, we show how to obtain separate (hot) temperatures of electrons and holes from photoluminescence spectra analysis. The individual thermalization coefficients of each carrier type are also discussed. The method developed in this article paves the way towards the design of new energy harvesting devices and to the development of advanced characterization tools. Finaly, to increase the PV performance enhancement and reduce the concentration factor, an optimize design is investigated.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130E (8 March 2019); doi: 10.1117/12.2513178
Show Author Affiliations
Laurent Lombez, Institut Photovoltaïque d'Ile-de-France (France)
Dac-Trung Nguyen, Institut Photovoltaïque d'Ile-de-France (France)
François Gibelli, Institut Photovoltaïque d'Ile-de-France (France)
Julie Goffard, Institut Photovoltaïque d'Ile-de-France (France)
Ctr. de Nanosciences et de Nanotechnologies (France)
Andrea Cattoni, Institut Photovoltaïque d'Ile-de-France (France)
Ctr. de Nanosciences et de Nanotechnologies (France)
Soline Boyer-Richard, Institut National des Sciences Appliquées (France)
Alain Le Corre, Institut National des Sciences Appliquées (France)
Olivier Durand, Institut National des Sciences Appliquées (France)
Stéphane Collin, Institut National des Sciences Appliquées (France)
Jean-François Guillemoles, Institut Photovoltaïque d'Ile-de-France (France)


Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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