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Proceedings Paper

Bipolar compatible epitaxial poly for surface-micromachined smart sensors
Author(s): Paul T. J. Gennissen; Patrick J. French; Marian Bartek; Pasqualina M. Sarro; A. van der Boogaard; Cassan C. C. Visser
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Paper Abstract

This paper presents the development of a new technique to prevent occurrence of compressive stress in epipoly. The use of an epitaxial reactor to grow polysilicon enables the growth of monocrystalline silicon (for bipolar electronics) and polysilicon on top of oxide (for MEMS) in a single deposition step. However, after bipolar processing the early structures show compressive strain in the epipoly layer, which required careful MEMS design. We have found the cause of this compressive strain to be the oxidation steps in the bipolar process. The occurrence of this strain can be explained by the presence of oxygen in the epipoly. An alternative processing technique, where the epipoly is doped using implantation and shielded from oxygen by a nitride layer during further bipolar processing, yields epipoly layers without compressive strain. The full thermal budget of the bipolar process is used to diffuse and activate the implanted epipoly dopant.

Paper Details

Date Published: 23 September 1996
PDF: 8 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251240
Show Author Affiliations
Paul T. J. Gennissen, Delft Univ. of Technology (Netherlands)
Patrick J. French, Delft Univ. of Technology (Netherlands)
Marian Bartek, Delft Univ. of Technology (Netherlands)
Pasqualina M. Sarro, Delft Univ. of Technology (Netherlands)
A. van der Boogaard, Delft Univ. of Technology (Netherlands)
Cassan C. C. Visser, Delft Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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