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Proceedings Paper

Characterization of residual stress in metallic films on silicon with micromechanical devices
Author(s): Mathilde Boutry; Alain Bosseboeuf; Gerard Coffignal
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Paper Abstract

Al and Cr cantilever microbeams, microbridges and suspended microrings were fabricated by isotropic etching of silicon with a SF6/O2 plasma after film patterning. They were used for the characterization of both compressive stress, extensive stress and stress gradients in the metallic films. It is shown that valid residual stress measurements with such micromechanical devices must take into account stress changes due to process fabrication, underetching at the clamped ends, edge effects and stress gradients. This is demonstrated by bucking threshold measurements of microbridges and microrings of various sizes and 3D finite element linear static and linear buckling analyses including underetching or stress gradients. Cantilever microbeam profile measurements shows that temperature rise during etching must be carefully minimizes to avoid thermally induced stress gradients. Stress gradients in the deposited films have no effect on microbridges critical buckling stress but lead to a distortion of the microrings before the occurrence of buckling.

Paper Details

Date Published: 23 September 1996
PDF: 9 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251239
Show Author Affiliations
Mathilde Boutry, Univ. de Paris XI (France)
Alain Bosseboeuf, Univ. de Paris XI (France)
Gerard Coffignal, ENSAM (France)


Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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