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Proceedings Paper

Fabrication of piezoresistive-sensed AFM cantilever probe with integrated tip
Author(s): Ivo W. Rangelow; Feng Shi; Peter Hudek; Teodor Gotszalk; Piotr B. Grabiec; Piotr Dumania
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Paper Abstract

First piezoresistive AFM sensor developed by Quate was based on SOI technology. Alternative technology for fabrication of microtips integrated with silicon cantilever beam, used as a microprobe in atomic force microscopy, is described in this paper. It is based on a bulk micromachining to define the cantilever thickness, surface micromachining to develop sharp tip and standard IC planar processing. Specific sequence of plasma treated photoresist and hard masking steps followed by wet isotropic, wet anisotropic and dry etching is utilized to obtain very sharp silicon tips. First, HF/HNO3 based polishing etchant is used to create mesa islands at the end of the formed cantilever. Next, a planar IC processing sequence is realized to fabricate piezoresistive Wheatstone bridge which will serve as a force sensing element. Thickness of the beam is precisely controlled by electrochemical etch-stop technique in. Then, sharp tip is formed by both RIE and/or wet etching, using under-cutting method. Finally, deep anisotropic silicon etching combined with SF6/Ar plasma etching is used to create cantilever silicon beam.

Paper Details

Date Published: 23 September 1996
PDF: 9 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251232
Show Author Affiliations
Ivo W. Rangelow, Univ. Kassel (Germany)
Feng Shi, Univ. Kassel (Germany)
Peter Hudek, Univ. Kassel (Germany)
Teodor Gotszalk, Univ. Kassel (Germany)
Piotr B. Grabiec, Institute of Electron Technology (Poland)
Piotr Dumania, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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