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Proceedings Paper

Application of porous Si micromachining technology in the calorimetric sensor
Author(s): Zongsheng Lai; Xinjun Wan; Pingsong Zhou; Yunzhen Wang
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Paper Abstract

Using porous silicon as a sacrificial layer with a large distance from the structure to the substrate, the porous Si micromachining is a new generation surface micromachining technology. A sketch of the special self-made 3-cavity electrochemical device used for anodisation and a detailed description of the porous film formation parameters were given int his paper. Anodisation is performed with current density 40 mA/cm2 for 60 minutes. Formation parameters and amounts of several major impurities of porous-Si layer are studied. The porous-Si layer was removed in 1 percent KOH and then the flow channel with depth of 50 micrometers was formed. A 0.2 micrometers Ni-Cr thin film was deposited and patterned on the Si3N4+ poly-Si microbridge as a thermistor. The analysis model was introduced and met quite well with the experiment. The results of the fast response and low power dissipation are reported in this paper.

Paper Details

Date Published: 23 September 1996
PDF: 9 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251225
Show Author Affiliations
Zongsheng Lai, East China Normal Univ. (China)
Xinjun Wan, East China Normal Univ. (China)
Pingsong Zhou, East China Normal Univ. (China)
Yunzhen Wang, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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