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Proceedings Paper

Characterization and application of deep Si trench etching
Author(s): James G. Fleming; Carole Craig Barron
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Paper Abstract

A commercially available electron cyclotron resonance etcher has been used to develop deep silicon trench etch processes using SF6-O2 chemistries. It was found that the etch rate depends primarily on the delivery of reactant. Aspect ratio dependent etching is more evident in this chemistry than it is in chlorine-based chemistries. Selectivity of the silicon etch rate to the silicon dioxide mask etch rate is determined mostly by the influence of etch power on the silicon dioxide etch rate. Etch anisotropy is determined mostly by temperature and the O4-2) to SF6 ratio. The high degree of anisotropy attainable under conditions of low temperature and high O2 ratio must be balanced against the problem of micromasking which is also favored by these conditions. Deep silicon trench etching has the potential to have a major impact on micromachining. However, due to the many interactions between numerous variables each etch process must be tailored to the individual application.

Paper Details

Date Published: 23 September 1996
PDF: 7 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251223
Show Author Affiliations
James G. Fleming, Sandia National Labs. (United States)
Carole Craig Barron, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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