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Electronic and optical properties of MoS2 thin films deposited by magnetron sputtering studying
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Paper Abstract

Molybdenum disulfide (MoS2) thin films were prepared by magnetron sputtering MoS2 (99.9% purity) target at the different substrates (such as sapphire and silicon) at the various argon pressure and power discharge. Deposition parameters influence on the structure and optical properties of the MoS2 thin films were analyzed by atomic force microscope (AFM) and spectrophotometer that was used for detecting reflectance spectra and then to calculate thin films bandgap. MoS2 thin films on sapphire substrates have smoother surface roughness and higher bandgap energy than MoS2 thin films on Si substrate. MoS2 thin films bandgap energy increasing and surface roughness decreasing was caused by power discharge decreasing.

Paper Details

Date Published: 15 March 2019
PDF: 9 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221F (15 March 2019); doi: 10.1117/12.2512203
Show Author Affiliations
A. I. Belikov, Bauman Moscow State Technical Univ. (Russian Federation)
Kyaw Zin Phyo, Bauman Moscow State Technical Univ. (Russian Federation)
V. N. Kalinin, Bauman Moscow State Technical Univ. (Russian Federation)
A. I. Semochkin, Bauman Moscow State Technical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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