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Proceedings Paper

Selective SiO2-xFx growth with liquid-phase deposition for MEMS technology
Author(s): Ching-Fa Yeh; Yueh-Chuan Lee; Jwinn-Lein Su
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Paper Abstract

To develop a selectively grown silicon oxide film with low stress for micromachined devices, a novel liquid-phase- deposition (LPD) technique is proposed. LPD-oxide can be grown as the supersaturated concentration of Si(OH)4 reaches a low-limit. The concentration can be controlled y the deposition temperature and the quantity of boric acid (H3BO3) added. Owing to the difference in low-limit between Si and photoresist, a selective LPD process window is thus formed. The selective-growth mechanism has been proposed and confirmed. Detailed understanding is instructive to apply the technology to MEMS devices and microfabrication.

Paper Details

Date Published: 23 September 1996
PDF: 6 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251215
Show Author Affiliations
Ching-Fa Yeh, National Chiao Tung Univ. (Taiwan)
Yueh-Chuan Lee, National Chiao Tung Univ. (Taiwan)
Jwinn-Lein Su, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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