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Visible GaN laser diodes: from lowest thresholds to highest power levels
Author(s): Harald König; Muhammad Ali; Werner Bergbauer; John Brückner; Georg Brüderl; Christoph Eichler; Sven Gerhard; Urs Heine; Alfred Lell; Lars Naehle; Matthias Peter; Jelena Ristic; Georg Rossbach; André Somers; Bernhard Stojetz; Soenke Tautz; Jan Wagner; Teresa Wurm; Uwe Strauss; Markus Baumann; Anne Balck; Volker Krause
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Paper Abstract

More and more applications are using GaN laser diodes. Visible blue laser devices are well established light sources for converter based business projection of several thousand Lumens. Additional laser-based concepts like near-to-eye projection push device requirements above heretofore limits. In 2017, threshold currents of 10 and 20mA were reported for single mode blue and green laser, respectively. We will present a drastic reduction of laser threshold of green R&D laser samples by more than a factor of 2 down to 10mA. We also will discuss turn-on delay as a limiting factor for modulation speed and spatial resolution of flying spot projection.

On the other side, new applications may occur in the near future. We will present research data on blue laser bars as a possible component for industrial applications like for materials processing. LIV characteristics are measured up to power levels of 107W. We observe power conversion efficiencies of 44% at 60W output power for our best samples.

Paper Details

Date Published: 14 March 2019
PDF: 9 pages
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390C (14 March 2019); doi: 10.1117/12.2511976
Show Author Affiliations
Harald König, OSRAM Opto Semiconductors GmbH (Germany)
Muhammad Ali, OSRAM Opto Semiconductors GmbH (Germany)
Werner Bergbauer, OSRAM Opto Semiconductors GmbH (Germany)
John Brückner, OSRAM Opto Semiconductors GmbH (Germany)
Georg Brüderl, OSRAM Opto Semiconductors GmbH (Germany)
Christoph Eichler, OSRAM Opto Semiconductors GmbH (Germany)
Sven Gerhard, OSRAM Opto Semiconductors GmbH (Germany)
Urs Heine, OSRAM Opto Semiconductors GmbH (Germany)
Alfred Lell, OSRAM Opto Semiconductors GmbH (Germany)
Lars Naehle, OSRAM Opto Semiconductors GmbH (Germany)
Matthias Peter, OSRAM Opto Semiconductors GmbH (Germany)
Jelena Ristic, OSRAM Opto Semiconductors GmbH (Germany)
Georg Rossbach, OSRAM Opto Semiconductors GmbH (Germany)
André Somers, OSRAM Opto Semiconductors GmbH (Germany)
Bernhard Stojetz, OSRAM Opto Semiconductors GmbH (Germany)
Soenke Tautz, OSRAM Opto Semiconductors GmbH (Germany)
Jan Wagner, OSRAM Opto Semiconductors GmbH (Germany)
Teresa Wurm, OSRAM Opto Semiconductors GmbH (Germany)
Uwe Strauss, OSRAM Opto Semiconductors GmbH (Germany)
Markus Baumann, Laserline GmbH (Germany)
Anne Balck, Laserline GmbH (Germany)
Volker Krause, Laserline GmbH (Germany)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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