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SRAF rule extraction and insertion based on inverse lithography technology
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Paper Abstract

The placement and size of SRAF (sub-resolution assisted feature) can greatly affect the overlapped process window. The time-consuming inverse lithography technology (ILT) can provide the co-optimization for both main pattern and SRAFs, which can guarantee the results with high precision. Rule-based SRAF (RBSRAF) offers the efficient application in large scale layout, which relies mostly on the design of test patterns and the corresponding empirical data on wafer. Our paper demonstrates a methodology of SRAF rule extraction and insertion based on ILT. The SRAF rules are extracted from the results of ILT and inserted by the RBSRAF, which ensures the reliability of the SRAF rules and shortens the development cycle. The hotspots areas with substandard process variation (PV) band are then repaired by ILT tools. Besides, the SRAF printing model can further refine the placement and dimension. The experiment results validate the feasibility of our methodology to be applied in large scale layout finally.

Paper Details

Date Published: 20 March 2019
PDF: 12 pages
Proc. SPIE 10961, Optical Microlithography XXXII, 109610P (20 March 2019); doi: 10.1117/12.2511914
Show Author Affiliations
Xiaojing Su, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Pengzheng Gao, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Weijie Shi, Dongfang Jingyuan Electron Ltd. (China)


Published in SPIE Proceedings Vol. 10961:
Optical Microlithography XXXII
Jongwook Kye; Soichi Owa, Editor(s)

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