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Proceedings Paper

Laser reactive ablation deposition of carbon nitride thin films
Author(s): Armando Luches; A. P. Caricato; Gilberto Leggieri; Maurizio Martino; Alessio Perrone; G. Barucca; Paolo Mengucci; Joseph Zemek
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Paper Abstract

Thin amorphous C-N films were deposited on silicon substrates at room temperature by XeCl laser ablation of graphite in low pressure nitrogen and ammonia atmospheres. The deposition rates decrease with increasing ambient pressure. Films deposited in NH3 are thinner than films deposited in N2 at the same ambient pressure, their N/C atomic ratios are higher, but they present a lower quantity of N atoms bound to C atoms. Different diagnostic techniques were used to characterize the deposited films, which result homogeneous, hard and present a high electrical resistivity.

Paper Details

Date Published: 23 September 1996
PDF: 12 pages
Proc. SPIE 2789, High-Power Lasers: Applications and Emerging Applications, (23 September 1996); doi: 10.1117/12.251190
Show Author Affiliations
Armando Luches, Univ. degli Studi di Lecce (Italy)
A. P. Caricato, Univ. degli Studi di Lecce (Italy)
Gilberto Leggieri, Univ. degli Studi di Lecce (Italy)
Maurizio Martino, Univ. degli Studi di Lecce (Italy)
Alessio Perrone, Univ. degli Studi di Lecce (Italy)
G. Barucca, Univ. degli Studi di Ancona (Italy)
Paolo Mengucci, Univ. degli Studi di Ancona (Italy)
Joseph Zemek, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 2789:
High-Power Lasers: Applications and Emerging Applications
Georges Sayegh; Michael R. Osborne, Editor(s)

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