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Comparison of quantum dot lasers with and without tunnel-injection quantum well
Author(s): Sven Bauer; Vitalii Sichkovskyi; Florian Schnabel; Anna Sengül; Johann Peter Reithmaier; Ori Eyal; Gadi Eisenstein
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Paper Abstract

A comparison between QD lasers with and without tunnel-injection QW designs was performed. In both cases, six layers of a QD or TI-QD design were grown by molecular beam epitaxy equipped with group-V valved cracker cells. The InAs QDs are embedded in InAlGaAs barriers lattice matched to InP. The TI-QW consists of InGaAs separated by a thin InAlGaAs tunnel barrier. The lasers were processed into broad area and ridge waveguide lasers. Both laser designs exhibited high modal gain values in the range of 10-15 cm−1 per dot layer. The static and dynamic device properties of the different QD laser designs were measured and compared against each other.

Paper Details

Date Published: 1 March 2019
PDF: 7 pages
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093904 (1 March 2019); doi: 10.1117/12.2511724
Show Author Affiliations
Sven Bauer, Univ. Kassel (Germany)
Vitalii Sichkovskyi, Univ. Kassel (Germany)
Florian Schnabel, Univ. Kassel (Germany)
Anna Sengül, Univ. Kassel (Germany)
Johann Peter Reithmaier, Univ. Kassel (Germany)
Ori Eyal, Russell Berrie Nanotechnology Institute (Israel)
Gadi Eisenstein, Russell Berrie Nanotechnology Institute (Israel)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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