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GaN-based resonant-cavity light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector (Conference Presentation)
Author(s): Chia-Feng Lin; Jung Han
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Paper Abstract

InGaN-based resonant-cavity light-emitting diode (RC-LED) structure with an embedded 1/4λ-stack nanopipe-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. High refractive index Si-heavily doped GaN (n+-AlGaN:Si) epitaxial layers are transformed into low effective refractive index nanopipe AlGaN layers in the n+-AlGaN:Si/u-GaN stack structure through a doping-selective electrochemical and a lateral wet etching process. The anisotropic optical property of the nanopipe structure in the DBR structure provides an anisotropic and polarized high light reflectance spectra from ultra-violet to green light regions. The central wavelength blueshifted property with a high reflectivity stopband was observed in the angle-dependent reflectance spectra of the nanopipe DBR structure similar to conventional dielectric DBR structure. Ultra-short cavity length in the GaN-based resonant-cavity light-emitting diode had been realized by using the embedded and conductive nanopipe DBR with a narrow divergent angle property. Narrow linewidth, single cavity mode, and high linear polarized light are observed in the GaN-based RC-LED with an anisotropic nanopipe DBR structure which has the potential for the linear polarized vertical cavity surface emitting laser applications.

Paper Details

Date Published: 4 March 2019
Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400M (4 March 2019); doi: 10.1117/12.2511394
Show Author Affiliations
Chia-Feng Lin, National Chung Hsing Univ. (Taiwan)
Jung Han, Yale Univ. (United States)

Published in SPIE Proceedings Vol. 10940:
Light-Emitting Devices, Materials, and Applications
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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