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Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers
Author(s): A. Nishikawa; A. Loesing; B. Slischka
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Paper Abstract

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN-on-Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN-on-sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN-on-Si, demonstration of such cost advantages in micro LED application is not wide-spread yet. In this presentation, we have demonstrated excellent emission uniformity with well-controlled strain by precise strain-engineering. This opens the way to use the advantages of GaN-on-Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400Z (1 March 2019); doi: 10.1117/12.2511390
Show Author Affiliations
A. Nishikawa, ALLOS Semiconductors GmbH (Germany)
A. Loesing, ALLOS Semiconductors GmbH (Germany)
B. Slischka, ALLOS Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 10940:
Light-Emitting Devices, Materials, and Applications
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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