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Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition
Author(s): G. Hamon; N. Vaissiere; C. Lausecker; R. Cariou; W. Chen; J. Alvarez; J. L. Maurice; G. Patriarche; L. Largeau; J. Decobert; J. P. Kleider; P. Roca i Cabarrocas
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Paper Abstract

We present an innovative approach for the growth of crystalline silicon on GaAs using plasma-enhanced chemical vapor deposition (PECVD). In this process the substrate is kept at low temperature (175 °C) and epitaxial growth is obtained via the impact of charged silicon clusters which are accelerated towards the substrate by the plasma-potential and melt upon impact. Therefore, this is a nanometer size epitaxial process where the local temperature (nm scale) rises above the melting temperature of silicon for extremely short times (in the range from ps to ns). This allows obtaining epitaxial growth even on relatively rough GaAs films, which have been cleaned in-situ using a SiF4 plasma etching. We present in-plane X-Ray Diffraction (XRD) measurements which are consistent with the hypothesis that the epitaxial growth happens at a local high temperature. Indeed, the tetragonal structure observed and the low in-plane lattice parameter determined from XRD can only be explained by the thermal mismatch induced by a high growth temperature. The effect of the plasma on the underlying GaAs properties, in particular the formation of hydrogen complexes with GaAs dopants (C, Si, Te) is studied in view of the integration of the c-Si epi-layers into devices.

Paper Details

Date Published: 1 February 2019
PDF: 8 pages
Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109261C (1 February 2019); doi: 10.1117/12.2511174
Show Author Affiliations
G. Hamon, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)
Total S. A. Renewables (France)
N. Vaissiere, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)
C. Lausecker, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)
Total S. A. Renewables (France)
R. Cariou, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)
III-V Lab (France)
W. Chen, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)
J. Alvarez, GeePs, CNRS, CentraleSupélec, Univ. Paris-Sud, Univ. Paris-Saclay, Sorbonne Univ. (France)
J. L. Maurice, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)
G. Patriarche, Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay (France)
L. Largeau, Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay (France)
J. Decobert, III-V Lab. (France)
J. P. Kleider, GeePs, CNRS, CentraleSupélec,. Univ. Paris-Sud, Univ. Paris-Saclay (France)
P. Roca i Cabarrocas, LPICM-CNRS, Ecole Polytechnique, Univ. Paris-Saclay (France)


Published in SPIE Proceedings Vol. 10926:
Quantum Sensing and Nano Electronics and Photonics XVI
Manijeh Razeghi; Jay S. Lewis; Eric Tournié; Giti A. Khodaparast, Editor(s)

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