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Degradation physics of GaN-based lateral and vertical devices
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Paper Abstract

This paper reviews the most relevant mechanisms responsible for the degradation of GaN-based lateral and vertical electron devices. These components are almost ideal for application in power electronics, but the presence of semiconductor defects and the existence of degradation processes may limit their stability and lifetime. In this paper we focus on the following aspects: (i) the degradation processes induced by off-state conditions and leading to a time-dependent and/or catastrophic breakdown of the devices; (ii) the stability of the gate stack; (iii) the degradation of the electrical performance of vertical GaN transistors and diodes. To discuss these topics, we refer to case studies carried out in our laboratories.

Paper Details

Date Published: 1 March 2019
PDF: 10 pages
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091817 (1 March 2019); doi: 10.1117/12.2511145
Show Author Affiliations
Matteo Meneghini, Univ. degli Studi di Padova (Italy)
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Alessandro Barbato, Univ. degli Studi di Padova (Italy)
Matteo Borga, Univ. degli Studi di Padova (Italy)
Eleonora Canato, Univ. degli Studi di Padova (Italy)
Francesca Chiocchetta, Univ. degli Studi di Padova (Italy)
Elena Fabris, Univ. degli Studi di Padova (Italy)
Fabrizio Masin, Univ. degli Studi di Padova (Italy)
Arianna Nardo, Univ. degli Studi di Padova (Italy)
Fabiana Rampazzo, Univ. degli Studi di Padova (Italy)
Maria Ruzzarin, Univ. degli Studi di Padova (Italy)
Alaleh Tajalli, Univ. degli Studi di Padova (Italy)
Marco Barbato, Univ. degli Studi di Padova (Italy)
Gaudenzio Meneghesso, Univ. degli Studi di Padova (Italy)
Enrico Zanoni, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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