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Influence of Al ion implantation on electrical and optical properties in nitride TJ VCSEL
Author(s): P. Śpiewak; M. Wasiak; R. P. Sarzała
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Paper Abstract

In this paper, we present numerical simulations of nitride tunnel junction VCSELs (Vertical-Cavity Surface-Emitting Laser). This analysis concerned lasers emitting 405 nm wavelength. The simulated VCSEL is similar to the structure fabricated at University of California, Santa Barbara (UCSB). This structure has an Al-ion implantation applied for outer regions of the cavity. The results show how threshold parameters (threshold temperature and threshold current) and emitted power depend on the contrast of the refractive index in this implantation. We also analyze the influence of the implantation thickness and dimensions of the electrical aperture of the laser on capacitance phenomena occurring in the laser.

Paper Details

Date Published: 1 March 2019
PDF: 8 pages
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181L (1 March 2019); doi: 10.1117/12.2511134
Show Author Affiliations
P. Śpiewak, Lodz Univ. of Technology (Poland)
M. Wasiak, Lodz Univ. of Technology (Poland)
R. P. Sarzała, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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