Share Email Print
cover

Proceedings Paper • new

Fast electro-optics effect in strained silicon waveguide (Conference Presentation)
Author(s): Mathias Berciano; Guillaume Marcaud; Xavier Le Roux; Carlos Alonso-Ramos; Christian Lafforgue; Pedro Damas; Diego Pérez-Galacho; Daniel Benedikovic; Vladyslav Vakarin; Alicia Ruiz-Caridad; Paul Crozat; Delphine Marris-Morini; Eric Cassan; Laurent Vivien
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, Silicon is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities, like second harmonic generation nor the linear electro-optic effect (i.e. Pockels effect). Nonetheless, by means of strain gradients, generated by depositing a stressed layer (typically SiN) on silicon waveguides, this restriction vanishe. Hence, for years, many attempts on characterizing the second order nonlinear susceptibility tensor through Pockels effect have been performed. However, due to the semiconductor nature of silicon, its analysis has been wrongly carried out. Indeed, carriers in Si, at the Si/SiN interface and in SiN have a screening effect when performing electro-optic modulation, which have led to overestimations of the second order nonlinear susceptibility and eventually rose a controversy on the real existence of Pockels effect in strained silicon waveguides. Here, we report on unambiguous experimental characterization of Pockels effect in the microwave domain, by taking advantage of the inherent limitation of carrier effect in high frequency range. Recent results on high-speed measurements will be presented and discussed. Both charge effects and Pockels effect induced under an electric field will be also analysed.

Paper Details

Date Published: 4 March 2019
PDF
Proc. SPIE 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI, 109221Q (4 March 2019); doi: 10.1117/12.2511070
Show Author Affiliations
Mathias Berciano, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Guillaume Marcaud, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Xavier Le Roux, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Carlos Alonso-Ramos, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Christian Lafforgue, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Pedro Damas, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Diego Pérez-Galacho, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Daniel Benedikovic, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Vladyslav Vakarin, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Alicia Ruiz-Caridad, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Paul Crozat, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Delphine Marris-Morini, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Eric Cassan, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)
Laurent Vivien, Ctr. de Nanosciences et de Nanotechnologies (France)
CNRS (France)
Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 10922:
Smart Photonic and Optoelectronic Integrated Circuits XXI
Sailing He; El-Hang Lee, Editor(s)

© SPIE. Terms of Use
Back to Top