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Active plasmonic nanoantenna-based switches for controlling near-field properties
Author(s): Nitin Gupta; Priten B. Savaliya; Senthil Subramanian ; Anuj Dhawan
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Paper Abstract

We present a plasmonic switch based on a combination of plasmonic nanoantennas and a phase-change material such as vanadium dioxide (VO2) that exhibits great potential for switching the near-field around the nanoantenna at ultrafast time-scales. In order to characterize the switch, we employed the FDTD method to calculate the intensity switching ratio in the vicinity of the nanoantennas, i.e. the ratio of the electric-field intensity between the metallic state (On-state) and the semiconductor state (Off-state) of the VO2 material. The proposed switch exhibits an intensity switching ratio which is much higher as compared to those reported previously.

Paper Details

Date Published: 4 March 2019
PDF: 7 pages
Proc. SPIE 10927, Photonic and Phononic Properties of Engineered Nanostructures IX, 1092729 (4 March 2019); doi: 10.1117/12.2510909
Show Author Affiliations
Nitin Gupta, Indian Institute of Technology Delhi (India)
Priten B. Savaliya, Indian Institute of Technology Delhi (India)
Senthil Subramanian , Indian Institute of Technology Delhi (India)
Anuj Dhawan, Indian Institute of Technology Delhi (India)


Published in SPIE Proceedings Vol. 10927:
Photonic and Phononic Properties of Engineered Nanostructures IX
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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