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III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors
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Paper Abstract

We report III-N surface-emitting resonant-cavity light-emitting diodes (RCLEDs) at λ = 375 nm using a novel hybridmirror approach. The hybrid mirrors consist of 5 pairs of air-gap/AlGaN distributed Bragg reflector (DBR) at the bottom side of the vertical cavity and HfO2/SiO2 dielectric DBR (DDBR) on the top to facilitate the formation of a resonant cavity for nitride-based surface light emitting diodes. The air-gap/AlGaN DBR replaces the conventional thick stack of semiconductor DBR to achieve high reflectivity. Hybrid-mirror III-N RCLEDs with airgap/AlGaN DBR mirror were fabricated and the results showed that the III-N RCLEDs achieved high current density operation up to 40 kA/cm2 with a peak emission wavelength atλ = 375 nm and a full-width-half-maximum (FWHM) of 9.3 nm at room temperature.

Paper Details

Date Published: 1 March 2019
PDF: 7 pages
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180E (1 March 2019); doi: 10.1117/12.2510860
Show Author Affiliations
Jialin Wang, Georgia Institute of Technology (United States)
Chuan-Wei Tsou, Georgia Institute of Technology (United States)
Hoon Jeong, Georgia Institute of Technology (United States)
Young-Jae Park, Georgia Institute of Technology (United States)
Theeradetch Detchprohm, Georgia Institute of Technology (United States)
Karan Mehta, Georgia Institute of Technology (United States)
P. Douglas Yoder, Georgia Institute of Technology (United States)
Russell D. Dupuis, Georgia Institute of Technology (United States)
Shyh-Chiang Shen, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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