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Development of electron-selective SiO2/TiO2 stack layers with superior surface passivation capacity for n-type silicon substrates (Conference Presentation)

Paper Abstract

In this work, the electron-carrier-selectivity of ALD deposited TiO2 contact on n-type and p-type c-Si wafers is presented. The optical, compositional, and diode quality dependence of TiO2 on the ALD deposition temperature were analyzed using spectroscopic ellipsometry, AFM, XPS, GI-XRD, and CV measurements. By optimizing the ALD process parameters, an impressive effective minority carrier lifetime of up to 2.3 milliseconds corresponding to an iVoc of ~700 mV was obtained from wet chemical oxide-SiO2/TiO2 passivation stack layers. Finally, the asymmetry in C-V and J-V measurements betweenTiO2/n-type and TiO2/p-type c-Si heterojunctions was examined and the electron transport selectivity of TiO2 was revealed.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091928 (8 March 2019); doi: 10.1117/12.2510433
Show Author Affiliations
Hisham Nasser, Middle East Technical Univ. (Turkey)
Doguscan Ahiboz, Middle East Technical Univ. (Turkey)
Ezgi Aygun, Middle East Technical Univ. (Turkey)
Mona Zolfaghari Borra, Middle East Technical Univ. (Turkey)
Ozan Akdemir, Middle East Technical Univ. (Turkey)
Alpan Bek, Middle East Technical Univ. (Turkey)
Rasit Turan, Middle East Technical Univ. (Turkey)


Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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