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Design, fabrication, and characterization of a disordered one-dimensional broadband photonic bandgap structure
Author(s): Gavin La Rue; Ehsan Ordouie; Hossein Alisafaee; Azad Siahmakoun
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Paper Abstract

Disordered one-dimensional photonic bandgap (PBG) structures could prove useful in designing broadband reflectors capable of filtering chosen polarizations of incoming light. By capitalizing on the similarities between defects and disorder, it is possible to construct a 1D PBG structure such that the layers are non-uniform but the structure can retain its most novel properties. This is done by allowing the thickness of the layers in the structure to deviate uniformly around an average thickness by a preselected amount of deviation. A mathematical model using the Transfer Matrix Method for simulation has been previously constructed by this group. This model has been verified using FDTD simulation as well. The PBG structure was then fabricated consisting of TiO2 deposited by electron-beam physical vapor deposition (e-beam PVD) first at normal incidence and then at a 70o oblique angle. This pattern was repeated to create six bilayers of TiO2 films. This alternating pattern gives rise to the novel structure of a PBG structure by creating a repeating pattern of amorphous and biaxial, columnar, birefringent TiO2 ,which is analogous to using two different materials. Through testing using a polarizer, analyzer, and HeNe laser with a wavelength of 632.8 nm, it has been found that the sample does in fact match well with the expected theoretical results and acts as a broadband reflector for the TM polarization designed for a 70º incidence angle. The average layer thickness of the fabricated TiO2 PBG is 22.7 nm.

Paper Details

Date Published: 1 March 2019
PDF: 7 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192O (1 March 2019); doi: 10.1117/12.2510288
Show Author Affiliations
Gavin La Rue, Rose-Hulman Institute of Technology (United States)
Ehsan Ordouie, Rose-Hulman Institute of Technology (United States)
Hossein Alisafaee, Rose-Hulman Institute of Technology (United States)
Azad Siahmakoun, Rose-Hulman Institute of Technology (United States)

Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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