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A comparison of simulated spectra to observed spectra with regards to the valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber (Conference Presentation)
Author(s): Vincent R. Whiteside; Brenden A. Magill; Matthew P. Lumb; Hamidreza Esmaielpour; Michael A. Meeker; Rathsara R. H. H. Mudiyanselage; Adrien Messager; Sangeetha Vijeyaragunathan; Tetsuya D. Mishima; Michael B. Santos; Igor Vurgaftman; Giti A. Khodaparast; Ian R. Sellers

Paper Abstract

In order to accurately characterize the photoluminescence from an InAs/AlAsSb multi-quantum well hot carrier absorber, the band structure is generated with an 8 band k·p model utilizing the Naval Research Laboratory’s MultiBands® software tool. The simulated spectra for transitions between the lowest energy electron sub-band and the four lowest hole sub-bands are computed from the optical matrix elements and the calculated band structure. In depth temperature dependent simulations for absorption and photogenerated recombination of electron-hole carriers are compared with the experimental spectra. There is close agreement between simulated and observed spectra in particular, the room temperature e1-hh1 simulated transition energy of 805 meV nearly matches the 798 meV transition energy of the experimental photoluminescence spectra. Also, the expected energy separations between local maxima (p1-p2) in the simulated/experimental spectra have a difference of just 2 meV. The model has a valence band offset of 63 meV which is in general agreement with photoluminescence feature that suggests a valence band offset of 70 meV. To analyze the ‘hot’ carriers, the photoluminescence spectra is evaluated with three different methods, a linear fit to the high energy portion of the spectra and two methods which utilize either an equilibrium or non-equilibrium generalized Planck relation to fit the whole spectrum. The non-equilibrium fit enables individual carrier temperatures for both holes and electrons. This results in two very different carrier temperatures for holes and electrons: where the hole temperature, Th, is nearly equal to the lattice temperature, TL; while, the electron temperature, Te, is ‘hot’.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130I (8 March 2019); doi: 10.1117/12.2510126
Show Author Affiliations
Vincent R. Whiteside, The Univ. of Oklahoma (United States)
Brenden A. Magill, Virginia Polytechnic Institute and State Univ. (United States)
Matthew P. Lumb, U.S. Naval Research Lab. (United States)
The George Washington Univ. (United States)
Hamidreza Esmaielpour, The Univ. of Oklahoma (United States)
Michael A. Meeker, Virginia Polytechnic Institute and State Univ. (United States)
Rathsara R. H. H. Mudiyanselage, Virginia Polytechnic Institute and State Univ. (United States)
Adrien Messager, Lab. des Solides Irradies (France)
CNRS (France)
Sangeetha Vijeyaragunathan, The Univ. of Oklahoma (United States)
Tetsuya D. Mishima, The Univ. of Oklahoma (United States)
Michael B. Santos, The Univ. of Oklahoma (United States)
Igor Vurgaftman, U.S. Naval Research Lab. (United States)
Giti A. Khodaparast, Virginia Polytechnic Institute and State Univ. (United States)
Ian R. Sellers, The Univ. of Oklahoma (United States)


Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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