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Development of electrically pumped VECSEL in the visible spectrum
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Paper Abstract

In this contribution, we investigated the design of an AlGaAs/AlGaInP electrically-pumped VECSEL structure emitting at a wavelength of 665 nm. With the finite element method (FEM) of an electro-thermal numerical model, we analyzed the current density distribution in the active region of different laser structures by changing the structure geometry, doping concentration of current spreading layer, and bottom contact size. A complete flip-chip processing is proposed according to the optimized designed structure. The measured results of the electroluminescence (EL) profile indicate that the diameter of the emission area with quasi-Gaussian distribution can be up to 100 μm, which is in good agreement with the numerical simulation.

Paper Details

Date Published: 13 March 2019
PDF: 8 pages
Proc. SPIE 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX, 109010U (13 March 2019); doi: 10.1117/12.2509973
Show Author Affiliations
Zhihua Huang, Univ. of Stuttgart (Germany)
Michael Zimmer, Univ. of Stuttgart (Germany)
Michael Jetter, Univ. of Stuttgart (Germany)
Peter Michler, Univ. of Stuttgart (Germany)

Published in SPIE Proceedings Vol. 10901:
Vertical External Cavity Surface Emitting Lasers (VECSELs) IX
Ursula Keller, Editor(s)

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