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Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy
Author(s): R. S. Pokharia; K. R. Khiangte; J. S. Rathore; J. Schmidt; H. J. Osten; A. Laha; S. Mahapatra
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Paper Abstract

We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal- Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ~ 2 mA/W is observed at a -5V bias, when excited at 1550 nm.

Paper Details

Date Published: 27 February 2019
PDF: 7 pages
Proc. SPIE 10914, Optical Components and Materials XVI, 1091417 (27 February 2019); doi: 10.1117/12.2509720
Show Author Affiliations
R. S. Pokharia, Indian Institute of Technology Bombay (India)
K. R. Khiangte, Indian Institute of Technology Bombay (India)
J. S. Rathore, Indian Institute of Technology Bombay (India)
J. Schmidt, Leibniz Univ. Hannover (Germany)
H. J. Osten, Leibniz Univ. Hannover (Germany)
A. Laha, Indian Institute of Technology Bombay (India)
S. Mahapatra, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 10914:
Optical Components and Materials XVI
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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