Share Email Print

Proceedings Paper • new

Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn(1-x)MgxO (x=15%) thin film
Author(s): Md Jawaid Alam; Punam Murkute; Hemant Ghadi; Sushama Sushama; Subhananda Chakrabarti
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Owing to wide band gap and high exciton energy of ZnMgO can be used in UV based applications like laser diodes, LED and as transparent conducting oxide in solar cells. In present work, we study the effect of UVOzone (UVO) annealing on RF sputtered ZnMgO thin films. Here, we have deposited ZnMgO thin films on Si <100< substrate followed by UVO annealing treatment for 30 min. The as-deposited and UVO treated films were characterized using various optical, structural and elemental characterization techniques and compared with as-deposited ZnMgO thin films. Room Temperature PL results for as-deposited film exhibited dominant defects band emission (DBE) peak intensities in visible region with negligible emission from near band emission (NBE) peak. An increase in NBE emission peak at around ~ 360 nm (3.44eV) with minimal defect states emission was observed for UVO treated sample. NBE to DBE Intensity ratio (INBE/IDefect) of 1.7 was observed from sample B which was almost zero for as-grown film. High resolution X-ray diffraction (HRXRD) results exhibited (002), (220) and (311) crystal orientation peak in as-deposited sample. Post UVO (002) peak shifted to higher angle side. X-ray photoelectron spectroscopy results of Zn-2p and O-1s shows increase in metal-oxide bonds and decrease in oxygen vacancies. Atomic force microscopy results show increase in film roughness from 2.3 to 2.46 nm for as-deposited and UVO treated sample respectively. Authors would like to acknowledge IITBNF for all its facilities at IIT Bombay.

Paper Details

Date Published: 1 March 2019
PDF: 8 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192M (1 March 2019); doi: 10.1117/12.2509673
Show Author Affiliations
Md Jawaid Alam, Indian Institute of Technology Bombay (India)
Punam Murkute, Indian Institute of Technology Bombay (India)
Hemant Ghadi, Indian Institute of Technology Bombay (India)
Sushama Sushama, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

© SPIE. Terms of Use
Back to Top