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Intersubband absorption at normal incidence by m-plane ZnO/MgZnO quantum wells
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Paper Abstract

Intersubband absorption at normal incidence is forbidden by the selection rules and requires oblique incidence operation or texturing of the surface of intersubband-based devices such as focal plane arrays, adding additional processing steps to their fabrication and therefore increasing complexity and costs. Here we demonstrate normal-incidence, polarization sensitive intersubband absorption by wurtzite ZnO/MgZnO quantum wells grown on an m-plane orientation. When grown in this non-polar plane, the ZnO/MgZnO quantum wells spontaneously assemble forming a V-groove profile in the direction perpendicular to the c-axis, i.e. along the a-direction. A stack of quantum wells featuring this morphology acts as a metamaterial that allows for intersubband absorption at normal incidence whenever the electric field of the light is polarized in the direction perpendicular to the c axis. This phenomenon occurs because when the electric field is perpendicular to the c-axis it is no longer contained in the plane of the quantum wells therefore allowing for a small intersubband absorption. On the contrary, if the electric field is parallel to the c-axis, the usual normal-incidence conditions are recovered and no absorption is observed.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192C (1 March 2019); doi: 10.1117/12.2509524
Show Author Affiliations
M. Montes Bajo, Univ. Politécnica de Madrid (Spain)
J. Tamayo-Arriola, Univ. Politécnica de Madrid (Spain)
N. Le Biavan, Univ. Côte d'Azur, CNRS, CRHEA (France)
J. M. Ulloa, Univ. Politécnica de Madrid (Spain)
P. Vennéguès, Univ. Côte d'Azur, CNRS, CRHEA (France)
D. Lefebvre, Univ. Côte d'Azur, CNRS, CRHEA (France)
M. Hugues, Univ. Côte d'Azur, CNRS, CRHEA (France)
J.-M. Chauveau, Univ. Côte d'Azur, CNRS, CRHEA (France)
A. Hierro, Univ. Politécnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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