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Origin of the low-forward leakage current in InGaN-based LEDs
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Paper Abstract

We investigate the electroluminescence of blue LEDs in low bias (500 pA – 9 μA) at different temperature (15°C – 75°C). From 500 pA to 100 nA, the OP increases with bias current up to 10nA, and is stronger at higher temperature, as expected by radiative recombination through deep levels. The stronger contribution is at λ > 800 nm, i.e. at energies lower than the QW and GaN barrier midgap (720 nm). Above 100 nA the OP increases with current, and is compatible with QW emission. Its intensity decreases at higher temperature, as expected for non-radiative recombination. The experimental findings indicate that radiative recombination through deep levels can significantly influence the low current characteristics of the devices, even when those states are not at midgap.

Paper Details

Date Published: 1 March 2019
PDF: 7 pages
Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400J (1 March 2019); doi: 10.1117/12.2509513
Show Author Affiliations
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Matteo Buffolo, Univ degli Studi di Padova (Italy)
Nicola Renso, Univ. degli Studi di Padova (Italy)
Gaudenzio Meneghesso, Univ. degli Studi di Padova (Italy)
Enrico Zanoni, Univ. degli Studi di Padova (Italy)
Matteo Meneghini, Univ. degli Studi di Padova (Italy)

Published in SPIE Proceedings Vol. 10940:
Light-Emitting Devices, Materials, and Applications
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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