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Enhancement of photocurrent and responsivity of Zn1-xMgxO (x=15%)-based ultraviolet detector by UV-ozone treatment
Author(s): Md Jawaid Alam; Punam Murkute; Hemant Ghadi; Sushama Sushama; Shyam Murli Manohar Dhar Dwivedi; Anupam Ghosh; Chiranjib Ghosh; Aniruddha Mondal; Subhananda Chakrabarti
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Paper Abstract

UV photodetector have been successfully implemented in various applications like ozone sensing, communication, astronomy and flame detection etc. Zn(Mg)O is a wide band gap material with high excitonic binding energy at room temperature thus making it a promising material in optoelectronic industries. In the present work, we are achieving increased photocurrent and high responsivity in UV-A regime with post growth UV-ozone treatment from photodetector fabricated using RF sputtered ZnMgO thin film. The thin film was deposited on semi-insulating silicon wafer at 400C for 20 min followed by 70 min UV-Ozone treatment. The final step was to fabricate an interdigitated electrode on the processed samples. More than two times enhancement of photocurrent was observed after UVO treatment. Noteworthy responsivity values of 22 A/W and 67 A/W were measured from as-deposited and UVO annealed photodetector, respectively at 380 nm with an applied bias of -5 V bias. However, the measured detectivity values for as grown and UV-O annealed sample was 1.3 × 1013 and 2.7 × 1013, respectively. Noise equivalent power in as-deposited sample and UVO treated sample was estimated to be 2.4 × 10-12 W/√Hz and 1.1 × 10-12 W/√Hz respectively. Photo detector fabricated with UV-O annealing exhibited good switching behaviors with 37 ms and 30 ms rise and fall time, respectively.

Paper Details

Date Published: 1 March 2019
PDF: 8 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192L (1 March 2019); doi: 10.1117/12.2509509
Show Author Affiliations
Md Jawaid Alam, Indian Institute of Technology Bombay (India)
Punam Murkute, Indian Institute of Technology Bombay (India)
Hemant Ghadi, Indian Institute of Technology Bombay (India)
Sushama Sushama, Indian Institute of Technology Bombay (India)
Shyam Murli Manohar Dhar Dwivedi, National Institute of Technology, Durgapur (India)
Anupam Ghosh, National Institute of Technology, Durgapur (India)
Chiranjib Ghosh, National Institute of Technology, Durgapur (India)
Aniruddha Mondal, National Institute of Technology, Durgapur (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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