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InP/AlGaInP quantum dot laser emitting at short wavelength of 660 nm
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Paper Abstract

In this report, we investigated the optical gain properties and lasing characteristics of a laser structure consisting of one single-layer of self-assembled InP quantum dots in Al0.10GaInP barriers. The optical gain and absorption spectra are obtained by analyzing the amplified spontaneous emission. An internal optical loss value of 5±2 cm−1 , and a maximum peak modal gain of 39.3 cm−1 for a single-sheet of QD were obtained at room temperature. The influence of temperature on the gain properties was studied. A 2.24-mm-long laser with uncoated facets emitting at 660 nm was demonstrated. A low threshold current density of 281 A/cm2 with an external differential quantum efficiency of 34.2% was also achieved.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390M (1 March 2019); doi: 10.1117/12.2509508
Show Author Affiliations
Zhihua Huang, Institut für Halbleiteroptik und Funktionelle Grenzflächen (Germany)
Univ. Stuttgart (Germany)
Michael Zimmer, Institut für Halbleiteroptik und Funktionelle Grenzflächen (Germany)
Univ. Stuttgart (Germany)
Stefan Hepp, Institut für Halbleiteroptik und Funktionelle Grenzflächen (Germany)
Univ. Stuttgart (Germany)
Michael Jetter, Institut für Halbleiteroptik und Funktionelle Grenzflächen (Germany)
Univ. Stuttgart (Germany)
Peter Michler, Institut für Halbleiteroptik und Funktionelle Grenzflächen (Germany)
Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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