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Proceedings Paper

Semiconductor surface superlattice symmetry type evaluation
Author(s): Yuri Kornienko; Alexander P. Fedtchouk; Ruslana A. Rudenko
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Paper Abstract

We have constructed the automated complex oriented to the semiconductor wafer surface superlattice symmetry type evaluation. The basis of the method is the photo-e.m.f. signal registration as a function of the rotation angle of the upper transparent electrode. The main part of the apparatus is the molecular dipole probe being characterized by the value of the surface monolayer charge which in turn depends on the wafer surface micro curvature (atomic rows energetic relief). As the result of the present work the interdependence between the number of light director orientation axes and surface atoms coordination type which is, at the same time, the symmetry of the superlattice.

Paper Details

Date Published: 13 September 1996
PDF: 9 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250940
Show Author Affiliations
Yuri Kornienko, Odessa State Univ. (Ukraine)
Alexander P. Fedtchouk, Odessa State Univ. (Ukraine)
Ruslana A. Rudenko, Odessa State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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