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InGaN/GaN µLED SPICE modelling with size-dependent ABC model integration
Author(s): Anis Daami; François Olivier
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Paper Abstract

The need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes (μLEDs). We propose to use a SPICE modelling technique to describe and simulate the electro-optical behavior of the μLED. A sub-circuit portrayal of the whole device will be used to describe current-voltage behavior and the optical power performance of the device based on the ABC model. We suggest an innovative method to derive instantaneously the carrier concentration from the simulated electrical current in order to determine the μLED quantum efficiency. In a second step, a statistical approach is also added into the SPICE model in order to apprehend the spread on experimental data. This μLED SPICE modelling approach is very important to allow the design of robust pixel driving circuits.

Paper Details

Date Published: 26 February 2019
PDF: 7 pages
Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120E (26 February 2019); doi: 10.1117/12.2509382
Show Author Affiliations
Anis Daami, Univ. Grenoble Alpes, CEA-LETI (France)
François Olivier, Univ. Grenoble Alpes, CEA-LETI (France)


Published in SPIE Proceedings Vol. 10912:
Physics and Simulation of Optoelectronic Devices XXVII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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