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Proceedings Paper

Study of cathodoluminescence spectroscopy of aluminum nitride
Author(s): Fazla Rabbi M.B. Hossain; Xiao Tang; Kobchat Wongchotigul; Michael G. Spencer
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Paper Abstract

The cathodoluminescence (CL) measurements of carbon doped and undoped aluminum nitride (AlN) thin films near the band- edge region were performed at temperatures of 300, 77 and 4.2 K. These films were grown on three different substrates sapphire, 6H-SiC and 4H-SiC. The typical thickness of these films was in the range of 0.35 - 0.4 micrometer. Two distinct peaks 'A' and 'B' were observed in undoped samples around 6.1 and 5.9 eV, respectively. Also, there is an expected peak within the low energy side of peak 'B.' The absorption spectra of different carbon doped AlN on sapphire substrate were carried out to study the Urbach tail's parameters which play an important role near the band-edge transitions.

Paper Details

Date Published: 13 September 1996
PDF: 4 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250938
Show Author Affiliations
Fazla Rabbi M.B. Hossain, Howard Univ. (United States)
Xiao Tang, Howard Univ. (United States)
Kobchat Wongchotigul, Howard Univ. (United States)
Michael G. Spencer, Howard Univ. (United States)


Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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