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Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation)
Author(s): Omar Saket; Fabien Bayle; François Julien; Martina Morassi; Nuno Amador; Jean-Christophe Harmand; Noelle Gogneau; Maria Tchernycheva
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Paper Abstract

In-rich InGaN/GaN nanowires (NWs) are key optoelectronic materials, which can close the green gap of the light emitting diodes and can be used in efficient high-bandgap solar cells for integration in tandem devices. Realization of these devices requires as a first step the optimization of the NW structure and their electrical parameters. Electron Beam Induced Current (EBIC) microscopy is well suited to probe nanoscale devices with a high resolution and to extract the material parameters. Here, we analyze the electrical properties of axial GaN and InGaN/GaN n-p and p-n junction NWs using EBIC microscopy. III-N NWs were grown on Si(111) substrates by molecular beam epitaxy using Mg as a p-dopant and Si as an n-dopant. The growth conditions were adjusted to optimize the doping order with an abrupt axial junction without a parasitic radial overgrowth. From the EBIC analysis of the GaN p-n junctions, the doping level and the minorities carrier diffusion lengths were extracted. Next, a p-GaN/i-InGaN/n-GaN junction containing an In-rich InGaN segment [1] was grown yielding a flat and strong EBIC signal in the InGaN NW portion. NW arrays were then contacted and their behavior under visible light was analyzed. [1] Morassi et al., Cryst. Growth Des., 2545, 18 2018

Paper Details

Date Published: 13 March 2019
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Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180U (13 March 2019); doi: 10.1117/12.2509370
Show Author Affiliations
Omar Saket, Ctr. de Nanosciences et de Nanotechnologies (France)
Fabien Bayle, Ctr. de Nanosciences et de Nanotechnologies (France)
François Julien, Ctr. de Nanosciences et de Nanotechnologies (France)
Martina Morassi, Ctr. de Nanosciences et de Nanotechnologies (France)
Nuno Amador, Ctr. de Nanosciences et de Nanotechnologies (France)
Jean-Christophe Harmand, Ctr. de Nanosciences et de Nanotechnologies (France)
Noelle Gogneau, Ctr. de Nanosciences et de Nanotechnologies (France)
Maria Tchernycheva, Ctr. de Nanosciences et de Nanotechnologies (France)


Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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