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GaN-based frequency stabilized seed laser and tapered amplifiers for first-stage strontium cooling (Conference Presentation)
Author(s): Ludwig Prade; John Macarthur; Christopher Carson; Caspar C. Clark; John Sharp; Yeshpal Singh; Kai Bongs; Steve Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; P. Wisniewski; S. Grzanka; D. Schiavon; M. Leszczyński; Loyd McKnight
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Paper Abstract

Systems with the ability to observe and manipulate individual quantum states have been brought to applications that include among others satellite-free navigation and high-precision gravimetric sensing. Fundamentally, the applicability of quantum technology is limited by the complexity and financial burden of light sources required for such systems. These sources need to feature high optical power combined with compromised beam quality and frequency-stabilized narrow-linewidths. These parameters directly influence the performance of the quantum technology measurement system. Semiconductor devices are able to provide high brightness over broad spectral regions through band-gap engineering. InGaN-based laser sources can be engineered to operate from 380nm to 530 nm. This aligns well with the transitions of atomic species such as strontium, magnesium and ytterbium. However, a challenge remains to offer the narrow-linewidths (<1 MHz) and the high powers (>100 mW) required for many of these applications. We will present our development of GaN based narrow-linewidth seed and tapered amplifiers to operate at 461nm for first stage strontium cooling. This includes growth of custom optimised GaN epitaxy for operation at 461 nm, a robust ECDL geometry, a novel tapered amplifier design and important work in characterising and minimising the surface reflectivity to identify suitable working parameters. A comprehensive characterization of the device will be presented.

Paper Details

Date Published: 8 March 2019
Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109260Q (8 March 2019); doi: 10.1117/12.2509350
Show Author Affiliations
Ludwig Prade, Fraunhofer Ctr. for Applied Photonics, UK (United Kingdom)
John Macarthur, Fraunhofer Ctr. for Applied Photonics, UK (United Kingdom)
Christopher Carson, Fraunhofer Ctr. for Applied Photonics, UK (United Kingdom)
Caspar C. Clark, Helia Photonics Ltd. (United Kingdom)
John Sharp, Helia Photonics Ltd. (United Kingdom)
Yeshpal Singh, The Univ. of Birmingham (United Kingdom)
Kai Bongs, The Univ. of Birmingham (United Kingdom)
Steve Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
T. Suski, TopGaN Ltd. (Poland)
L. Marona, TopGaN Ltd. (Poland)
S. Stanczyk, TopGaN Ltd. (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
S. Grzanka, TopGaN Ltd. (Poland)
D. Schiavon, TopGaN Ltd. (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Loyd McKnight, Fraunhofer Ctr. for Applied Photonics, UK (United Kingdom)

Published in SPIE Proceedings Vol. 10926:
Quantum Sensing and Nano Electronics and Photonics XVI
Manijeh Razeghi; Jay S. Lewis; Eric Tournié; Giti A. Khodaparast, Editor(s)

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