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Proceedings Paper

Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack
Author(s): JingMin Leng; John J. Sidorowich; Y. D. Yoon; Jon L. Opsal; B. H. Lee; Giho Cha; Joo-Tae Moon; Sang-In Lee
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Paper Abstract

We developed a robust measurement recipe for six layer SOI film stack. Both spectrometer and BPR were combined to characterize the plate and storage polysilicons. A new global optimization method was developed to find the best solution in parameter spaces with up to 12 parameters. Such a recipe was applied to production wafers with over 50 site die mapping. The 5 day repeatability shows the measurements were stable and robust.

Paper Details

Date Published: 13 September 1996
PDF: 7 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250935
Show Author Affiliations
JingMin Leng, Therma-Wave, Inc. (United States)
John J. Sidorowich, Therma-Wave, Inc. (United States)
Y. D. Yoon, Therma-Wave, Inc. (United States)
Jon L. Opsal, Therma-Wave, Inc. (United States)
B. H. Lee, Samsung Electronics Co., Ltd. (South Korea)
Giho Cha, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Sang-In Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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