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Proceedings Paper

Real-time preparation-free imaging of mobile charge in SiO2
Author(s): Lubek Jastrzebski; Piotr Edelman; Jacek J. Lagowski; Andrew M. Hoff; A. Savchouk; Eric Persson
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Paper Abstract

Recent developments in SiO2 diagnostics have opened a possibility for measuring the mobile charge in oxide without the expensive and time consuming preparation and analysis of MOS test structures. A key element of the new approach is that corona charge is deposited directly onto the SiO2, over the entire wafer surface, to create an electric field needed for ion drift. Mobile charge density is determined by mapping of the oxide voltage change after temperature stress. As a result, whole-wafer mobile charge maps with over 6000 points may be acquired in about ten minutes at a sensitivity below 1010 c-2 for 100 nm oxides. A distinctive feature of the new technique is that the measurement of oxide voltage shift is done under strong inversion or accumulation and is insensitive to interface traps and oxide fixed charge. In other methods based on the flat band voltage shift these charges near the SiO2-Si interface are a major limitation.

Paper Details

Date Published: 13 September 1996
PDF: 11 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250934
Show Author Affiliations
Lubek Jastrzebski, Semiconductor Diagnostics, Inc. (United States)
Piotr Edelman, Semiconductor Diagnostics, Inc. (United States)
Jacek J. Lagowski, Univ. of South Florida (United States)
Andrew M. Hoff, Univ. of South Florida (United States)
A. Savchouk, Univ. of South Florida (United States)
Eric Persson, Lucent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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