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Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells
Author(s): F. Atteia; J. Le Rouzo; G. Berginc; J. J. Simon; L. Escoubas
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Paper Abstract

Black silicon processing is a promising research area to improve optical properties of silicon solar cells. Currently, RIE method is used at cryogenic temperature because it enables a very good control of shapes of nano-structures but working at cryogenic temperature in a clean room can be an issue. In order to produce black silicon under realistic industrial conditions, room temperature process has to be achieved. We present a study aiming at etching silicon wafer surfaces using “Room Temperature SF6/O2 Reactive Ion Etching” (RT-RIE).

Paper Details

Date Published: 27 February 2019
PDF: 7 pages
Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130U (27 February 2019); doi: 10.1117/12.2509326
Show Author Affiliations
F. Atteia, IM2NP, CNRS, Aix Marseille Univ., Univ. de Toulon (France)
Thales (France)
J. Le Rouzo, IM2NP, CNRS, Aix Marseille Univ., Univ. de Toulon (France)
G. Berginc, Thales (France)
J. J. Simon, IM2NP, CNRS, Aix Marseille Univ., Univ. de Toulon (France)
L. Escoubas, IM2NP, CNRS, Aix Marseille Univ., Univ. de Toulon (France)


Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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