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Proceedings Paper

Optical characterization of amorphous and polycrystalline silicon films
Author(s): Effiong Ibok; Shyam Garg; George G. Li; A. Rahim Forouhi; Iris Bloomer; Joel W. Ager
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Paper Abstract

This paper describes a methodology that has been incorporated into a fully integrated measurement system, the n&k Analyzer, that determines simultaneously the thickness, energy band gap, and n and k spectra (from 190 to 900 nm) of various forms of silicon, i.e., a-Si, poly-Si films, and mixtures of a-Si and poly-Si films. Additionally, the system also measures the average surface roughness. In turn, the n and k spectra of such films can be correlated to processing conditions, temperature being the most important one in LPCVD method. The n&k Analyzer can be used to identify the amorphous-polycrystalline transition regime and characterization of films produced in this regime.

Paper Details

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250929
Show Author Affiliations
Effiong Ibok, Advanced Micro Devices, Inc. (United States)
Shyam Garg, Advanced Micro Devices, Inc. (United States)
George G. Li, n&k Technology (United States)
A. Rahim Forouhi, n&k Technology (United States)
Iris Bloomer, n&k Technology (United States)
Joel W. Ager, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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