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Proceedings Paper

Stark effect: a novel method of characterization of low-dimensional heterostructure semiconductor lasers
Author(s): B. S. V. Gopalam
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Paper Abstract

Application of electric field to heterostructure p-n junctions beyond the threshold produces lasing. On further increase of the electric field the peak of the intensity shifts towards red. The line width also increases. In this article it is shown that this shift as well as the change in the line width can be effectively utilized to distinguish the 3D to 0D structures. The shift in the bulk structure exhibits F2/3 power law, where 'F' is the electric field, while 2D, 1D, and 0D samples give rise to a quadratic dependence as in single atoms. In addition elegant modifications in micro-fabricational techniques are suggested as to realize more efficient structures with ease.

Paper Details

Date Published: 13 September 1996
PDF: 18 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250928
Show Author Affiliations
B. S. V. Gopalam, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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