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Proceedings Paper

Combined spectroscopic ellipsometry and reflectometry for advanced semiconductor fabrication metrology
Author(s): William A. McGahan; Blaine R. Spady; John A. Iacoponi; John D. Williams
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Paper Abstract

Spectroscopic reflectometry has been a mainstay of optical semiconductor metrology for many years, as has single wavelength ellipsometry performed at a fixed angle of incidence. More recently, spectroscopic ellipsometry has been employed to provide film thickness and optical constant measurements with greater precision and accuracy. In this work we demonstrate the combined use of spectroscopic ellipsometry (performed from 420 - 720 nm at 75 degree angle of incidence) and spectroscopic reflectometry (performed from 200 to 800 nm at normal incidence) for the characterization of thin films and multilayer stacks commonly encountered in semiconductor device fabrication. By employing sophisticated parametric dispersion models and simultaneously fitting both the reflectance and ellipsometric spectra, we are able to perform accurate and precise characterization of many structures that cannot be characterized with either technique alone or with combined reflectometry and single wavelength ellipsometry.

Paper Details

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250927
Show Author Affiliations
William A. McGahan, Nanometrics, Inc. (United States)
Blaine R. Spady, Nanometrics, Inc. (United States)
John A. Iacoponi, Advanced Micro Devices, Inc. (United States)
John D. Williams, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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