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Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy, high-energy ion implantation, and combined ion-beam and molecular beam epi
Author(s): Yunosuke Makita
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Paper Abstract

By using molecular beam epitaxy (MBE) technology, one can now fabricate routinely ultra-pure GaAs and Si layers with the background residual impurity concentration lower than approximately 1 by 1014 cm-3. We incorporated mass-separated impurities into these layers by means of high-energy ion-implantation (HE-I2) and low-energy ion beam impinging during MBE growth (CIBMBE). Low-temperature (2K) photoluminescence (PL) spectra from acceptor-doped GaAs layers prepared by HE-I2 and CIBMBE methods revealed that multiple shallow emission levels are formed with increasing net hole concentration, NA-ND. These emissions were theoretically interpreted as the pairs between ground- and excited-states acceptors. The absence of these energy levels in the conventional specimens was attributed to a strong optical compensation effect induced by an extremely small amount of shallow donors that were accidentally introduced during sample preparation. The majority of these energy levels were found to present strong red or blue energy-shifting with increasing NA-ND. These PL features were confirmed to be used for the determination of NA-ND and compensation ratio totally by an optical method. High-dose incorporation of Fe atoms into Si substrates was carried out by HE-I2 method for the synthesis of beta-FeSi2. In 2K-PL spectra, one noticed strong edge-emission from beta- FeSi2, indicating that HE-I2 method is powerful to synthesize high quality silicides.

Paper Details

Date Published: 13 September 1996
PDF: 12 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250922
Show Author Affiliations
Yunosuke Makita, Electrotechnical Lab. (Japan)

Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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