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Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance
Author(s): T. Kikuchi; K. Imokawa; A. Ikeda; D. Nakamura; T. Asano; H. Ikenoue
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Paper Abstract

We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (~1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ω・cm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (~1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ω・cm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.

Paper Details

Date Published: 4 March 2019
PDF: 7 pages
Proc. SPIE 10905, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV, 109050Z (4 March 2019); doi: 10.1117/12.2509191
Show Author Affiliations
T. Kikuchi, Kyushu Univ. (Japan)
K. Imokawa, Kyushu Univ. (Japan)
A. Ikeda, Sojo Univ. (Japan)
D. Nakamura, Kyushu Univ. (Japan)
T. Asano, Kyushu Univ. (Japan)
H. Ikenoue, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 10905:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
Tetsuya Makimura; Gediminas Račiukaitis; Carlos Molpeceres, Editor(s)

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