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Proceedings Paper

Determination of COP distribution after SC1 cleaning by a laser particle counter
Author(s): T. Fujise; Y. Yanase; M. Hourai; M. Sano; Hideki Tsuya
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Paper Abstract

COPS (crystal originated particle/pit), which are considered to be originated from grown-in defects formed during CZ crystal growth and degrade GOI (gate oxide integrity) of MOS ULSI devices, were studied with respect to the size and density distribution on a surface of CZ grown Si wafer by means of laser particle counter. Firstly we studied the relation between detection limit of COP size and various measurement parameters such as PMT (photomultiplier) gain and threshold level of laser particle counter (SFS6200) using AFM (atomic force microscope), OPP (optical precipitate profiler), and LST (infrared light scattering tomography). Then this method was applied to evaluation of as grown CZ Si wafer containing Ring-OSF region, which were revealed after annealing such as 1000 degrees Celsius for 1 hour in dry O2, and the COP size and density distribution were compared to those of the grown-in defects measured by OPP and LST. It was found COP measured by laser particle counter had good correlation in the size and density distribution with the grown-in defects measured by OPP and LST, and the COP showed slightly higher density than the grown-in defects by OPP. This means COP measurement by laser particle counter is a more sensitive method to evaluate grown-in defects than OPP and LST.

Paper Details

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250919
Show Author Affiliations
T. Fujise, Sumitomo Sitix Corp. (Japan)
Y. Yanase, Sumitomo Sitix Corp. (Japan)
M. Hourai, Sumitomo Sitix Corp. (Japan)
M. Sano, Sumitomo Sitix Corp. (Japan)
Hideki Tsuya, Sumitomo Sitix Corp. (Japan)


Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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