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Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process
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Paper Abstract

Near-infrared InAs/GaSb Type-Ⅱ superlattices is widely used in biomimetics, sensing, color-imaging technology and other applications. An antireflection coating(AR coating) can help it perform better, making the infrared photodetector a higher responstivity and also a higher quantum efficiency. We produce a broadband AR coating by plasma-enhanced chemical vapor deposition(PECVD) then using the lift-off technology making no damage without any change in the usual Infrared detector process flow, a 260 nm SiO2 AR coating is transform onto the surface of the infrared photodetector. After using the AR coating, the antireflection can provide up to 40% light gain, while the average reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice is decreased from 33% to 14%. The responsitivity is increased obviously.

Paper Details

Date Published: 9 November 2018
PDF: 8 pages
Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 108261Z (9 November 2018); doi: 10.1117/12.2509181
Show Author Affiliations
Qing-xuan Jia, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Chun-yan Guo, Xi'an Institute of Optics and Precision Mechanics (China)
Xi'an Jiaotong Univ. (China)
Yao-yao Sun, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Cheng-ao Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yue-xi Lv, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi Jiang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Da-nong Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Xi Han, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Dong-wei Jiang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Guo-wei Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10826:
Infrared, Millimeter-Wave, and Terahertz Technologies V
Cunlin Zhang; Xi-Cheng Zhang; Masahiko Tani, Editor(s)

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