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Proceedings Paper

Characterization and in-line control of UV-transparent silicon nitride films for passivation of FLASH devices
Author(s): Jia Zhen Zheng; Denise Tan; Peter Chew; Lap Hung Chan
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Paper Abstract

UV-transparent silicon nitride (UV-SiN) films were deposited in a plasma enhanced chemical vapor deposition (PECVD) reactor. The material and optical properties of the films were characterized for non-volatile memory devices as passivation layers. Factorial designed-of-experiments were used to study the dependence of the film properties on various process parameters. The UV-transparent SiN films are characterized by deposition rate, film uniformity, UV transmittance, film stress, refractive index, wet etch rate and hydrogen content. In this study, high quality SiN films with low compressive stress, low hydrogen content and high UV transmittance (greater than 80% for 1.5 micrometer thick film) were successfully deposited and this film has been incorporated into the passivation scheme of submicron FLASH devices. Because the absorption coefficient of silicon material is very high in the UV region, direct and accurate UV transmittance measurement for SiN by optical transmission spectrometry can only be made when SiN is deposited on quartz substrate. In this work, a simple method was used to calculate the UV-transmittance of SiN film deposited on silicon wafers from the measured extinction coefficient using a spectro-ellipsometer. This method has been further demonstrated for in-line monitoring of UV transmittance of SiN films.

Paper Details

Date Published: 13 September 1996
PDF: 8 pages
Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); doi: 10.1117/12.250915
Show Author Affiliations
Jia Zhen Zheng, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Denise Tan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Peter Chew, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Lap Hung Chan, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 2876:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II
Armando Iturralde; Te-Hua Lin, Editor(s)

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