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Proceedings Paper

Process monitoring using surface charge profiling (SCP) method
Author(s): Jerzy Ruzyllo; P. Roman; J. Staffa; Ismail Kashkoush; Emil Kamieniecki
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Paper Abstract

This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.

Paper Details

Date Published: 13 September 1996
PDF: 12 pages
Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); doi: 10.1117/12.250899
Show Author Affiliations
Jerzy Ruzyllo, The Pennsylvania State Univ. (United States)
P. Roman, The Pennsylvania State Univ. (United States)
J. Staffa, The Pennsylvania State Univ. (United States)
Ismail Kashkoush, Submicron Systems, Inc. (United States)
Emil Kamieniecki, QC Solutions, Inc. (United States)


Published in SPIE Proceedings Vol. 2876:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II
Armando Iturralde; Te-Hua Lin, Editor(s)

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